PART |
Description |
Maker |
HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
SMJ44400 SMJ44400HR SMJ44400JD |
1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY
|
Austin Semiconductor ETC
|
MB8132E-H |
32,768-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Fujitsu
|
HM5118165BTT-8 HM5118165B HM5118165BJ-6 HM5118165B |
1048576-word x 16-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
MCM32256 MCM32256S10 MCM32256S70 MCM32256S80 MCM32 |
256K x 32 Bit Dynamic Random Access Memory Module
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MB8264A MB8264A-15 MB8264A-10 MB8264A-12 |
MOS 65536-bit Dynamic Random Access Memory
|
Fujitsu Microelectronics Fujitsu Media Devices Limited Fujitsu Component Limited.
|
AK481024G AK481024S |
1,048,576 x 8 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80 HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80 HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器(单存取RAM⑩) HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM Integrated Device Technology, Inc.
|
AK591024 AK59256 |
4,194,304 Word x 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION http://
|
AK59256AG AK59256AS |
262,144 Word by 9 bit, CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
AK5916384GP-60 AK5916384SP-70 |
16,777,216 Word by 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|